基于锡纳米薄膜的灰度曝光研究

摘要灰度光刻技术用于一步曝光工艺制作具有任意三维高度差的器件，在微机电器件制作中具有重要应用价值。目前在具有高精度且与传统集成电路制作工艺兼容的灰度光刻技术成本较高。本课题利用激光直写技术加工 30 nm 厚的 Sn 纳米薄膜，确定了激光直写加工 30nm厚的Sn灰度掩模较好的加工参数为激光峰值功率240 mW，脉宽30 ns，刻写频率为10 Hz，刻写步长0.04-0.05 µm。制作了4×4FP腔的灰度掩模版图，并用 AZ6130胶将灰度掩模图经光刻步骤转移到了胶上，在胶厚为 3 µm时对应的最佳曝光时间为 5 s。在灰度值小于200的范围内，光刻胶的曝光深度与灰度值有线性关系。在后续的 RIE（反应离子刻蚀）工艺中成功地将光刻胶上的三维信息转移到了SiO2片上。在SF6流量为5.5 mL/min， CHF3 为32 mL/min，He 为150 mL/min，射频功率为RF200W，气压为1850scc 的条件下，SiO2片与光刻胶选择比在 2-2.5，实现了一步制作不同深度的4×4FP腔，为灰度光刻技术的提供了另一种方法。48669
毕业论文关键词灰度光刻 Sn 纳米薄膜激光直写 FP腔 RIE 刻蚀
Title Research on Sn Nano film based grey-tone exposure
Abstract Grey-tone photolithography is used for fabricating any 3-D micro parts, having high application value in MEMS devices fabrication. Having high precision and high compatibility with conventional integrated circuit fabrication process ,grayscale photolithography technology having high costs. In this study, we fabricated 30nm-thick Sn thin film using LDW(laser direct writing technology) and obtained optimized LDW parameters in the fabrication of grey-tone mask. The obtained optimized parameters as follows: maximum power 240mW, laser pulse 30ns, writing length ranging between 0.04 µm to 0.05 µm and frequency 10 Hz. The 4×4 Fabry–Pérot-filter-array mask was fabricated successfully, in which every Fabry–Pérot-filter cavity have different height, and the patterns were transferred to AZ6130 photoresist 3-D Morphology successfully. The optimized exposure time is 5s. In later reactive ion etching procedure transferred 3-D Morphology in photoresists to SiO2 substrate. We get it’s etching ratio between 2 to 2.5, in the parameter of SF6 5.5 mL/min，CHF3 32 mL/min，He 150 mL/min, RF power 200W，pressure 1850scc. The achieved fabricate 4×4 Fabry–Pérot-filter-array cavity, which every Fabry–Pérot-filter cavity have different height in one procedure. This study provided another way to realize gray-tone photolithography.
Keywords: grey-tone lithography Sn Nano film laser direct write Fabry–Pérot-filter cavity RIE

1引言1

1.1灰度光刻技术的应用与发展1

1.2灰度光刻掩模版.2

1.3金属Sn纳米薄膜灰度掩模版..2

1.4激光直写.3

1.5光刻技术.4

1.6刻蚀工艺.5

1.7FP阵列滤波器6

1.8研究内容及目的意义6

2实验原理..8

2.1Sn纳米薄膜淀积.8

2.2激光直写Sn掩模版.9

2.2.1激光直写系统.10

2.2.2Sn纳米薄膜的制备11

2.3灰度掩模版曝光光刻胶11

2.4刻蚀转移图形..12

2.4.1反应离子刻蚀机理13

3实验设计与结果.14

3.1Sn纳米薄膜生长14

3.2激光直写Sn纳米薄膜.14

3.2.1实验过程..14

3.2.2激光直写Sn掩模图形总结..18

3.3光刻参数探究..19

3.3.1曝光时间对图形分辨率的影响及光刻胶曝光深度.19 基于锡纳米薄膜的灰度曝光研究:http://www.youerw.com/cailiao/lunwen_51343.html