铁基铁电氧化物薄膜光电性质研究

摘要铁电材料具有优异的介电性、压电性、热释电性等性质，它作为一类重要的功能材料可制作成器件并广泛应用于国防、通信、航天领域。铁酸铋是目前发现的惟一在室温下就具有铁电性和反铁磁性的多铁电材料，因而研究铁酸铋的制备及其光电性质就非常重要。73786

本文采用脉冲激光沉积技术制备了一系列 Bi2FeCrO6 薄膜。利用 X 射线衍射技术和扫描探针显微镜对其相组成，畴结构，铁电性和阻变效应进行研究分析。主要包括以下三方面的内容：（1）探索 Bi2FeCrO6 薄膜的最佳制备条件；（2）研究 Bi2FeCrO6 薄膜的铁电性，畴反转情况；（3）研究底电极对铁电薄膜阻变效应的影响。

结果表明：要生长出高质量的薄膜要把生长条件控制在较低的氧气分压以及较低的温度下；Bi2FeCrO6 薄膜具有明显的铁电效应；以 SrRuO3 为底电极的 Bi2FeCrO6 薄膜其阻变效应相比于以镧锶锰氧为底电极更明显，原因在于 La2/3Sr1/3MnO3 电极本身的电阻可能太大。

毕业论文关键词铁电薄膜脉冲激光沉积铁电性阻变

毕业设计说明书外文摘要

Title Research of Photoelectric Properties of Iron-based erroelectric Thin Film

Abstract Multiferroic materials, with excellent ferroelectric, dielectric, piezoelectric, pyroelectric and photoelectric behaviors have been widely used in national defense, communications and aerospace。 Bismuth ferrite (BiFeO3,BFO), is the most promising multiferroic material containing ferroelectric and anti-ferromagnetic behaviors simultaneously at room temperature。 Hence, it is important to investigate the electro-optical properties of bismuth ferrite。

In this work, Bi2FeCrO6 thin films are prepared by pulsed laser deposition。 Scanning probe microscope and X-ray diffraction are used to characterize the surface morphology, domain structure, resistance switching behavior and crystal structure of thin films。 This work mainly focuses on three aspects :(1)to explore the best preparation conditions of Bi2FeCrO6 thin films;(2)to investigate the ferroelectric behavior of Bi2FeCrO6 thin films;(3)to observe the effects of bottom electrode on resistance switching behavior of Bi2FeCrO6 thin films。

The temperature and oxygen pressure of 650℃ and 0。01Pa respectively are the best preparation conditions for Bi2FeCrO6 thin films。 It is proved that Bi2FeCrO6 thin film has obvious ferroelectric behavior under applied voltage of -4V and +4V。 Bi2FeCrO6 thin films deposited on La2/3Sr1/3MnO3 electrode provides the worse resistance switching behavior, because La2/3Sr1/3MnO3 electrode has much larger resistance compared to SrRuO3 electrode。

Keyword film , PLD, ferroelectric, resistance switching behavior

本科毕业设计说明书第 I 页

1 引言 1

1。1 铁电材料 1

1。1。1 铁电体 1

1。1。2 铁酸铋(BiFeO3) 2

1。2 阻变效应及其产生原理 2

1。2。1 阻变效应 2

1。2。2 阻变产生的微观机理 3

2 薄膜制备方法及其表征方法 6

2。1 薄膜的制备方法 6

2。1。1 脉冲激光沉积法（PLD） 6

2。2 薄膜的表征方法铁基铁电氧化物薄膜光电性质研究:http://www.youerw.com/cailiao/lunwen_83485.html