摘要采用磁控溅射工艺制备不同调制周期和调制比的Al/MoO3含能复合薄膜，调制周期分别为1500 nm、500 nm、150 nm、50 nm(调制比均为2:3)，调制比为4:3、2:3、4:9 (调制周期均为150 nm)，薄膜总厚度为3 μm。借助扫描电子显微镜（SEM）和差热分析法（DTA）对其进行表征，结果显示薄膜成膜结构良好，Al/MoO3含能复合薄膜的反应起始温度随调制周期的减小而降低。
将Al/MoO3复合薄膜与半导体桥火工品（SCB）进行复合得到Al/MoO3含能复合半导体桥，在不同激励电压下对其进行电爆实验。实验结果表明调制周期或调制比越小，含能半导体桥的临界激发时间越短，火焰面积越大，薄膜反应更加完全。在调制比为2:3时，调制周期为50 nm的含能半导体桥的电爆性能最好，其在50 V激发下的临界激发时间为6。45 s，在30 V~50 V激发下的燃烧时间都高于600 s。在调制周期固定为150 nm时，调制比为4:9的含能半导体桥的电爆性能最好，其在50 V电压激励下的临界激发时间为4。68 s，相比原半导体桥仅延长了1。08 %，同时燃烧时间也能达到600 s。74284
毕业论文关键词 半导体桥 Al/MoO3 调制周期 调制比
毕业设计外文摘要
Title Effects of Modulation Period and Modulation Ratio of Energetic Composite Films on Ignition Performance of Energetic Semiconductor Bridge
Abstract
The Al/MoO3 energetic composite films with different modulation period and modulation ratio were prepared by magnetron sputtering and characterized by Scanning Electron Microscopy (SEM)and Differential Thermal Analysis (DTA)。 Results showed that the layered structure of films was excellent and the initial reaction temperature of films reduced with decreasing of modulation period
The Al/MoO3 energetic semiconductor bridge was fabeicated with Al/MoO3 energetic composite films on a semiconductor bridge（SCB）and tested in electrical explosive experiment under different excitation voltage。Experimental results showed that the modulation period or the modulation ratio was smaller, the shorter critical excitation time of energetic semiconductor bridge , the larger area of the flame and the more complete reaction of films。 When the modulation period was 50 nm（20 nm/30 nm）, critical excitation time of energetic SCB was 6。45 s under the voltage of 50 V and the burning time was longer than 600 s under the voltage range of 30 V ~ 50 V。 When the modulation ratio was 46 nm/104 nm, the critical excitation time under the voltage of 50 V was 4。68 s which increased by only 1。08 % compared to the original SCB,and the burning time can reach 600 s。
Keywords semiconductor bridge Al/MoO3 modulation period modulation ratio
目次
1 引言 1
1。1 研究背景 1
1。2 国内外研究进展 2
1。3 本文研究的主要内容 5
2 Al/MoO3含能复合薄膜的制备和表征 6
2。1 Al/MoO3含能复合薄膜的制备 6
2。2 Al/MoO3含能复合薄膜的形貌分析 8
2。3 Al/MoO3含能复合薄膜热分析 10
2。4 本章小结 12
3 Al/MoO3含能复合半导体桥的制备及电爆实验研究 13
3。1 Al/MoO3含能复合半导体桥的制备 13
3。2 电爆实验方法及电爆规律 调制周期与调制比对含能复合半导体桥电爆特性的影响:http://www.youerw.com/huaxue/lunwen_84844.html