摘要论述了多孔硅的特点和制备方法，总结了几种不同方法制备多孔硅材料不同之处。其中，应用单晶硅片双槽电化学腐蚀法制备多孔硅拥有可移植性强、产品性能优良、实验重复性好、制备工艺简单并易于控制反应流程等特点。    通过光刻方法进行硅片预处理，形成阵列形式的硅基片，应用双槽电化学腐蚀方法配合光刻技术制备出性能稳定的多孔硅阵列。 通过实验研究了不同电流强度、电解液配比、光刻条件对多孔硅阵列形貌和性能的影响，得到了最优制备工艺。结果表明：使用HF酸乙醇溶液做电解液、以3：1的酸纯比、电流强度10-30mA/cm2，反应时间5min～20min时，可以得到发火性能比较优越的多孔硅含能材料阵列。    通过磁控溅射镀金属桥，通过超声震荡填充含能材料，制作了易于点火的多孔硅含能材料芯片，初步进行了激光点火和电点火实验。
关键词  多孔硅  阵列  双槽电化学腐蚀法10393
毕业设计说明书（论文）外文摘要
Title  Preparation and test of the porous silicon energetic materials array
Abstract
Discussed the characteristics and the preparation methods of Porous silicon .Make a distinction between several different methods of preparing  Porous silicon materials .Summed up the application of silicon double tank electrochemical method for preparing porous silicon has strong portability ,product performance ,good experimental repeatability ,simple preparation process and easy control of reaction process characteristics. Through the photolithography wafer pretreatment method form the silicon substrate array .Using double tank electrochemical method with lithography method prepared porous silicon array which has stable performance .Found the different current intensity ratio ,electrolyte ,lithography conditions on the appearance and performance through the test .research shows that :when use HF acid-ethanol solution as electrolyte ,the ratio of HF to ethanol is 3:1,current intensity is 10-30 mA/cm2, reaction time is 5-20 min ,can get superior Porous silicon which has well ignition quality .Through the magnetron sputtering gold-plated of bridge and the ultrasound concussion filling energetic materials ,made porous silicon chip which is easy to be ignited .Conduct an preliminary experiment that using laser ignition and electric ignition.
Keywords:  porous silicon ,array, double tank electrochemical method
目 次
1 绪论    1
1.1 研究背景    1
1.2 多孔硅制备方法概述    2
1.2.1原电池法（电偶腐蚀法）    2
1.2.2 无酸水热腐蚀法    3
1.2.3 阳极氧化法    4
1.2.4 火花放电腐蚀法    5
1.3 本论文研究内容    5
2 多孔硅阵列制备工艺    6
2.1 光刻    6
2.1.1 光刻原    6
2.1.2 实验仪器设备    6
2.1.3 匀胶与显影    8
2.1.4 实验结果分析    10
2.2 电化学腐蚀    10
2.2.1 电化学腐蚀机理    10
2.2.2 所用化学试剂与仪器设备    11
2.2.3 实验步骤及现象    11
2.2.4 多孔硅形貌结构表征    13
2.2.5 实验结果分析    13
2.3 本章小结    15
3 多孔硅含能芯片    16
3.1 磁控溅射镀膜    16
3.2 超声原位装药法填充氧化剂    18
3.3 干燥    19
3.4 小结    19
4 多孔硅芯片性能测试    20
4.1 激光点火实验    20
4.1.1 测试仪器与条件    20 多孔硅含能材料阵列的制备与测试:http://www.youerw.com/huaxue/lunwen_9442.html