GaN薄膜光学性能分析+文献综述
时间:2018-09-06 11:45 来源:毕业论文 作者:毕业论文 点击:次
| 摘要: GaN具有禁带宽度大、热导效率高、电子饱和漂移速度大和介电常数小等特点，是近年来国内外的一个研究热点，在高亮度发光二极管、短波长激光二极管、高性能紫外探测器和高温、高频、大功率半导体器件等领域，尤其在蓝绿光发光和激光器件中有着广泛的应用前景，但到目前为止对它的认识还很不充分。本课题为了将GaN薄膜更好的应用在半导体光源上，从而提升光源的发光性能，主要对不同条件下（a面氮化镓薄膜和c面氮化镓薄膜）生长出的GaN薄膜进行结构和光学性能的测试，分析并比较其性能。本文首先介绍了GaN基半导体材料的制备方法，采用MOCVD法分别在不同的衬底上生长GaN薄膜，然后通过不同的测试手段对样品进行分析，用XRD衍射分析研究其结晶质量，使用拉曼光谱对a面氮化镓薄膜和c面氮化镓薄膜进行应力测试，拉曼散射可以用来测定材料的晶体结构,了解材料的晶体质量,从而对材料生长提供一定的帮助。通过透过光谱分析其光学性能。27829 毕业论文关键字： a面氮化镓薄膜 c面氮化镓薄膜 拉曼光谱 XRD衍射分析 透过光谱 Research on optical properties of GaN films Abstract: GaN has a band gap, high thermal conductivity efficiency, large electron saturation drift velocity and low dielectric constant features, is a hot topic at home and abroad in recent years, high-brightness light-emitting diodes, short-wavelength laser diode, high-performance UV detector and areas of high temperature, high-frequency, high-power semiconductor devices such as, in particular, has a wide range of applications in the blue and green light emitting laser device, but so far it is still far from sufficient. The issue in order to better application GaN film on a semiconductor light source, so as to enhance the light emitting properties of the light source, mainly under different conditions (a-plane GaN thin film and c-plane GaN film) of GaN films grown structure and The optical performance of the test, analyze and compare their performance. This paper introduces the preparation of GaN-based semiconductor materials are grown by MOCVD on different substrates GaN film, and then the samples were analyzed by means of different tests, with XRD diffraction analysis of its crystalline quality, the use of Raman spectroscopy gallium nitride thin film on a plane and c-plane GaN film stress testing, Raman scattering can be used for crystal structure determination of materials, understanding of the crystal quality of the material, and thus the material growth will provide some help. Through spectroscopic analysis by its optical properties. Keywords: a-plane GaN c-plane GaN Raman spectrum XRD diffraction analysis Transmission spectrum 目 录 1 绪论 1 1.1 课题的目的和意义 1 1.2 国内外研究现状与发展趋势 1 1.3 本文的主要内容和安排 2 2 氮化镓薄膜的生长 4 2.1 氮化镓薄膜的性质 4 2.2 氮化镓薄膜的制备 5 2.2.1 金属有机物化学气相沉积（MOCVD）工艺 5 2.2.2 氢化物气相外延（HVPE）技术 7 2.2.3分子束外延（MBE）技术 10 3 XRD衍射分析 11 3.1 XRD衍射分析简介 11 3.2 XRD衍射分析方式 11 3.3 XRD测试结果与分析 12 3.4 晶粒尺寸的计算与分析 14 4 拉曼光谱分析 16 4.1 拉曼光谱研究氮化镓基材料的优势和意义 16 4.2 拉曼光谱的应用 16 4.3 拉曼散射中的应力效应 17 (责任编辑：qin) |