高量子效率KSb-CS阴极制备技术研究

摘要锑钾铯(K2CsSb)阴极在可见光区有较高的灵敏度，峰值量子效率可达 20%以上。本文从理论上分析了提高锑钾铯(K2CsSb)光电阴极量子效率的方法，通过在制备过程中精确控制光电阴极厚度、使用增透膜来提高其量子产额。文章推导了透射式阴极量子效率理论公式，并由此确定了锑钾铯(K2CsSb)阴极最佳膜厚为 40nm。结合多层光学薄膜理论，给出了阴极膜厚与其反射率 R 的理论关系式并绘制了相应的理论曲线。在实验过程中通过实时测量获得阴极反射率数据，以此获得阴极膜层厚度、结构等信息，指导阴极制备工艺。同时计算了增透膜的折射率及最佳膜厚，并给出了几种符合要求的增透膜材料。74304

毕业论文关键词双碱光电阴极反射率增透膜量子效率

毕业设计说明书外文摘要

Title Research on the Preparation Technology of the K2CsSb Photo-cathode with High Quantum Efficiency

Abstract K2CsSb cathode in the visible region has a higher sensitivity, peak quantum efficiency up to 20%。 This paper first analysis the methods to improve the quantum efficiency of K2CsSb cathode theoretically。 By controlling the thickness of the cathode accurately and using the AR coating, the quantum efficiency can be improved。 The paper gives the theoretical formula about quantum efficiency of transmission cathode, and from this we conclude that the optimum thickness of the cathode film is 40nm。 Based on the theory of multilayer optical film, the reflective formula is given。 In the preparation process, the thickness and structure of the cathode can be obtained from reflective data and we can use this to guide the preparation process。 In addition we also calculate the reflective index and the thickness of the AR coating, finally some materials are given for their best characteristic as AR coating。

Keywords photo-cathode; quantum efficiency; reflectivity; AR-coating

本科毕业设计说明书第 I 页

目次 I

1 绪论 1

1。1 锑钾铯阴极发展概述 1

1。2 锑钾铯阴极国内外研究状况 2

1。3 本文研究的背景和意义 3

1。4 本文研究安排 3

2 半导体的光电子发射 5

2。1 半导体光电子发射物理过程 5

2。2 提高量子效率的措施 5

2。2。1 增加光吸收能力 5

2。2。2 进行表面处理 6

2。3 透射式光电阴极的量子效率 7

2。3。1 阴极光电流监控法 11

2。3。2 阴极多信息量监控法高量子效率KSb-CS阴极制备技术研究:http://www.youerw.com/tongxin/lunwen_84874.html