摘要本文采用传统固相法制备得到 ZrO2-SnO2-TiO2 微波介质陶瓷，通过复合添加 0。5wt%、1。0wt%、1。5wt%、2。0wt% ZnO 烧结助剂，研究了烧结助剂对材料性能的影 响；其次讨论不同烧结温度对其性能的影响。81510

实验结果表明：同种成分的样品在不同温度下烧结，在烧结温度较低时，样品烧 结不完全，致密性较差。随着烧结温度的增加，样品致密度增加。当温度达到 1380℃ 致密度降低。0。5wt%、1。0wt%、1。5wt%、2。0wt%质量分数的样品在 1350℃介电常数 分别为 40。76、39。26、38。67、39。33。四种质量分数的样品都在此温度下介电性能最 佳。

加入适量的掺杂剂 ZnO 可以降低样品的烧结温度，随着质量分数的增加，当温 度为 1300℃，1330℃，1350℃时，致密度先增大后减小，介电性能先减小后增大， 在质量分数 1。5wt%纵向收缩率最大，分别为 11。09%、17。08%、15。49%，所以此时的 致密度最大，并且 1。5wt%的介电常数最小，分别为 36。97、36。83、38。67 所以此时的 介电性能最低。当当温度为 1380℃，1400℃时，致密度先增大后减小，介电性能先 减小再增大最后减小，在质量分数为 1。0wt%时纵向收缩率最大，分别为 16。20%和 16。02%，所以此时致密度最大，并且 1。0wt%的介电常数最小，分别为 36。39 和 36。24， 所以此时的介电性能最差。

毕业论文关键词: 烧成温度；掺杂剂 ZnO；介电性能

Abstract The conventional solid state reaction method to prepare ZrO2-SnO2-TiO2 of microwave dielectric ceramics, the effects of sintering additives on the properties of the material were studied by combined addition of 0。5wt%, 1。0wt%, 1。5wt% and 2。0wt% ZnO sintering aids; followed by discussion of the influence of different sintering temperature on the properties。

The experimental results show that the samples sintered at different temperatures, the samples sintered at low sintering temperature, the density of the samples is poor。 With the increase of sintering temperature, the density of samples increases。 When the   temperature

reaches 1380℃, the density is reduced。 The four mass fraction of the sample at 1350℃  is

40。76, 39。26, 38。67, 39。33, respectively。 The four mass fraction samples have the best dielectric properties at this temperature。

Adding appropriate amount of doping agent ZnO can reduce the sintering temperature of the sample, with the increase of mass fraction, when the temperature  of  1300℃ , 1330℃ , 1350 ℃, the density first increased and then decreased,  dielectric properties    of

first decreases and then increases, in 1。5wt% mass fraction of longitudinal shrinkage rate is the largest, respectively 11。09% and 17。08% and 15。49%, so at this time caused by maximum  density and  dielectric constant  of 1。5wt% min,  respectively,  and  36。97, 36。83

38。67 so at this moment, the dielectric properties of the lowest。 When the temperature of 1380℃ , 1400℃ , the density increases first and then decreases, dielectric properties of first decreases and then increases and finally decreases, when the mass fraction of  1。0wt%

for longitudinal shrinkage rate is the largest, respectively 16。20% and 16。02%, so at this time due to the maximum density and the dielectric constant of 1。0wt% min, respectively, and 36。39 and 36。24, so at the dielectric properties of the worst。

Keywords: Sintering temperature    dopant ZnO    dielectric properties

目 录

第一章 绪论 1

1。1  引言 1

1。2  微波介质陶瓷材料的应用