摘要本文采用基于密度泛函理论的第一性原理方法,计算了Cu掺杂NiO的态密度和能带结构,分析了掺杂对NiO结构和能带的影响。结果表明:掺杂后晶格发生相应畸变;Cu掺杂引入了杂质能级,禁带宽度发生变化,态密度的峰值明显变大,而随着掺杂Cu的浓度的增加,峰值减小。87215 毕业论文关键词:密度泛函理论,Cu掺杂NiO,态密度,能带结构
Abstract The first-principle calculations based on the density functional theory have been performed to investigate the doping behaviors of Cu doped in NiO。 From the calculated resulted results, that show the lattice distortion and impurity levels in the band gap of NiO are introduced by Cu doping and the width of the band gap is correspondingly changed and the peaks of density of states obviously becomes larger, however, with the increase of the numbers of doped Cu atoms, the peak is reduced。
Keywords:density functional theory,Cu doped in NiO,density of states,band structure
目录
第一章绪论(1)
1。1 NiO材料及其属性。(1)
1。2 NiO纳米材料的掺杂及其应用状况。(2)
第二章计算机模拟方法(5)
2。1 第一性原理方法发展状况。(5)
2。2 Shrodinger方程在第一性原理中的求解近似。。。(5)
2。3 第一性原理方法在NiO相关属性研究中的应用。(8)
第三章Cu掺杂NiO属性的第一性原理研究。(12)
3。1 建立模型。。(12)
3。2 态密度分析。。(13)
3。3 能带结构分析。。。(14)
3。4 对比。。。(16)
第四章 总结与展望。(18)