AlGaN/GaN MIS-HEMT器件MIS结构界面态研究
关键词 : AlGaN/GaN HEMT 表面态 电流崩塌 表面处理 钝化
毕业设计说明书（毕业论文）外文摘要
Title The study of AlGaN/GaN MIS-HEMT interface states
Abstract
The great performance advantages of AlGaN/GaN HEMT determine its high value and huge potential in the power electronic field and high power microwave field ,but the current collapse caused by surface states has an influence on its reliability .The experiment takes both of pretreatment and surface passivation to decrease the current collapse. The surface passivation layers are deposited by PECVD and ICP-CVD respectively. Prior to passivation, the AlGaN/GaN HEMT are pretreated with N plasma. The results show that increase the time of N plasma pretreatment can further decrease current collapse and surface passivation layer deposited by ICP-CVD has better passivation performance than by PECVD under existing conditions. In addition, surface passivation can reduce GaN buffer layer’s electric leakage and annealing can repair AlGaN/GaN performance deterioration caused by surface damage.
Keywords： AlGaN/GaN HEMT surface states
current collapse pretreatment passivation
目 次
1 绪论 1
1．1研究背景 1
1.1.1AlGaN/GaN HEMT应用前景 1
1.1.2AlGaN/GaN HEMT性能研究进展 1
1.1.3AlGaN/GaN HEMT增强型器件研究进展 2
1.2研究目的 3
1.2.1电流崩塌效应概念 3
1.2.2抑制电流崩塌效应的方法 4
2实验材料与方法 6
2.1 实验总体方案 6
2.2 流片过程 6
2.2.1 AlGaN/GaN材料准备 7
2.2.1.1AlGaN/GaN材料生长 7
2.2.2源漏欧姆电极制备 8
2.2.3离子注入隔离 10
2.2.4栅肖特基电极制备 11
2.2.5表面钝化 12
2.2.6 开孔 14
2.2.7 流片中需注意的问题 16
2.3本章小结 17
3 实验结果与分析 18
3.1 衬底材料方块电阻和欧姆接触电阻的表征 18
3.2buffer漏电检测 19
3.3AlGaN/GaN HEMT输出特性 21
3.3.1 N等离子体表面处理时间对表面态的影响 21
3.3.2 ICP-CVD生长SiNx钝化层与退火工艺 24
3.4AlGaN/GaN HEMT瞬态特性 25
3.5 C-V测试 28
3.6 本章小结 30
结 论 31
致 谢 32
参考文献33
1 绪论
1．1研究背景
1.1.1AlGaN/GaN HEMT应用前景
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