摘要本文的主要工作是用脉冲激光溅射沉积法（PLD）在SrTiO3基片上制备出外延单相BiFeO3薄膜并测量和分析其各项性能。本文先使用PLD在SrTiO3基片上制备出BiFeO3薄膜，然后采用XRD、AFM和PFM对制备出的薄膜进行性能表征。先通过XRD谱确定长出的是外延单相BiFeO3薄膜；然后通过对不同生长条件下的薄膜样品进行AFM分析，寻找到薄膜生长的最佳条件，为630℃、55mJ、16Pa；最后利用压电响应力显微镜（PFM）观察到薄膜样品有明显的畴结构，说明所制备的薄膜样品具有良好的铁电性和压电性。26057
本实验所制备出的外延单相BiFeO3薄膜铁电性能良好，估计其可以被广泛应用于诸多领域，如存贮器的制备、红外探测与成像器件、光电子器件等。
关键词 铁电材料 BiFeO3 PLD XRD AFM PFM
毕业论文设计说明书外文摘要
Title Research on photoelectric properties of bismush ferric Films and ferroelectric domain evolution
Abstract
In this paper, epitaxial single-phase BiFeO3 films are prepared on SrTiO3 substrates by pulsed laser deposition(PLD). The performance has been measured and analysed.
In this study, BiFeO3 films are prepared on SrTiO3 substrates by pulsed laser deposition. With XRD, AFM and PFM, the properties of BiFeO3 films have been characterized. Firstly, epitaxial thin-film single-phase BiFeO3 is identified by XRD spectra. Secondly, the film samples under different growth conditions have been observed by AFM. The optimal conditions for the growth of film samples are 630 ℃, 55mJ, 16Pa, respectively. Finally, with piezoelectric force microscopy (PFM), significant domain structure was observed, indicating that film samples have good ferroelectric and piezoelectric properties.
Epitaxial single-phase BiFeO3 thin films prepared in this paper have good ferroelectric properities. The films may be widely used in many fields, such as the memory of the preparation, infrared detection and imaging devices, optoelectronic devices.
Keywords ferroelectric material BiFeO3 PLD XRD AFM PFM
目 次
1 引言 1
1.1 铁电体简介 1
1.1.1 铁电体的定义 1
1.1.2 铁电体的分类 2
1.1.3 铁电体的应用 2
1.1.4 BiFeO3的介绍 3
1.1.5 BiFeO3的现状 4
1.1.6 本实验的研究意义 4
2 BiFeO3薄膜的制备 5
2.1 制备方法——脉冲激光溅射沉积法（PLD） 5
2.1.1 PLD的工作原理 5
2.1.2 PLD的优、缺点 6
2.2 主要表征设备的工作原理 7
2.2.1 XRD的工作原理 7
2.2.2 AFM的工作原理 8
2.2.3 PFM的工作原理 8
2.3 PLD法制备BiFeO3薄膜 10
2.3.1 实验仪器和原料 10
2.3.2 实验步骤 11
3 BiFeO3薄膜各项性能的测量与分析 13
3.1 BiFeO3薄膜的XRD分析 13
3.2 BiFeO3薄膜的AFM分析 14
3.3 BiFeO3薄膜的PFM分析 15
结 论 24 铁酸铋薄膜光电性质及其铁电畴演变的研究:http://www.youerw.com/cailiao/lunwen_20096.html