-
随着现代科技的不断进步和发展，SCB火工品所处的电磁环境越来越恶劣，静电脉冲能量很容易会造成火工品的意外发火或性能改变。为了探究提高电火工品和半导体桥（SCB)火工品抗静电射频的有效方法，本文就压敏电阻能否适用于SCB火工品的静电防护以及其防护的效果如何进行了相关研究。实验结果表明：
- 上一篇：差示扫描量热法测试有机过氧化物的热安定性
- 下一篇：五氟乙烷灭火剂高温热分解与产物气体的毒性
（1）通过实验对比并联压敏电阻前后典型芯片SCB电爆性能的变化，得出并联压敏电阻并不会对SCB的电爆性能产生显著影响，与预期相符。
（2）在美军标下，SFI0603-080C型号的压敏电阻能够有效地对典型芯片三极管座SCB起到明显的静电防护作用，防护效果优异；
（3）在美军标下，SFI0603-120C型号的压敏电阻也能对典型芯片SCB起到一定的静电防护作用，但防护效果很差；
（4）在美军标下，SFI0603-270C型号压敏电阻对典型芯片SCB基本无静电防护作用，不能用来做典型SCB的静电防护元件。
关键词：半导体桥；压敏电阻；电爆性能；静电防护 5146
毕业论文设计说明书（论文）外文摘要
Title Study on Varistor for ESD protection of Semiconductor Bridge(SCB) electric explosive device(EED)
Abstract
With the continuous progress and development of modern science and technology , the electromagnetic environment of the SCB EED has been worsening, and the electrostatic pulse energy will easily lead to EED 's accidental ignition or characteristics changes. In order to explore the effective methods of the anti-electrostatic and anti-RF for EED and Semiconductor bridge (SCB), we research about whether the varistor can be applied to the electrostatic protection of the SCB EED and how much protective effect it has .The experimental results show that :
(1)Contrast the changes of the typical chip SCB 's electrical explosion performance before and after paralleling varistor in the experiment, we conclude that paralleling varistor will not affect the electro-explosive performance of the typical chip SCB significantly that is what we expect.
(2)In the experimental condition of U.S. military standard, the SFI0603-080C type varistor can effectively play a significant role in ESD protection to the typical chip transistor block SCB , and the effect of anti-electrostatic is excellent.
(3)In the experimental condition of U.S. military standard, the SFI0603-120C type varistor can also play a certain but not obvious role in ESD protection to the typical chip SCB, but the effect of anti-electrostatic is poor.
(4))In the experimental condition of U.S. military standard, the SFI0603-270C type varistor has not any anti-electrostatic effect to typical chip SCB, based on which we deem it as a unavailable anti-electrostatic unit for typical chip SCB.
Keyword: semiconductor bridge; varistor; electro-explosive performance; electrostatic protection
目 次
1 引言 1
1.1 课题研究的目的和意义 1
1.2 SCB火工品简介 1
1.3 国内外对SCB火工品静电防护的研究现状 3
1.4 静电放电和压敏电阻简介 6
1.5 本文的主要研究内容 9
2 实验方案与所用仪器 10
2.1 实验方法与步骤 10
2.2 实验原理 10
2.3 实验设备与仪器 11
3 SCB火工品并联压敏电阻后发火特性研究 12
3.1 实验样品制作 12
3.2 压敏电阻的参数分析 13
3.3并联压敏电阻对SCB火工品电爆性能影响 15
3.4 本章小结 19
4 并联压敏电阻对SCB火工品抗静电性能的影响 21