摘要:近十年发展起来的第三代半导体材料,是拥有卓越的光电性能的以GaN为代表的半导体材料。GaN即氮化镓,是优尔角纤锌矿结构,具有大的禁带宽度、高的热导率、耐高温、抗辐射等特性, 是人们很有兴趣研究的半导体材料之一。GaN基LED是新型的固态光源,作为制造白光LED的核心部分,吸引了各国科研工作者对其进行深入研究,具有功率低、寿命长、发光效率高等优点。
本文对GaN基LED的光学特性及稳定性进行了分析的,介绍了GaN基材料的起源、发展、现状、存在问题、可能的解决方法、国内外同行的研究进展。通过总结前人的工作,以期为GaN基LED材料性能的研究提供帮助,并为我们将来的相关研究提供理论研究基础。35498 毕业论文关键词:GaN基LED 光学特性 稳定性
Research Progress on Optical Properties and Stability of GaN-based LED
Abstract: With the development of the third generation semiconductor materials, there has excellent photoelectric performance represented by GaN semiconductor materials in nearly ten years. GaN is a hexagonal wurtzite structure semiconductor that has a large band gap width, high thermal conductivity, high temperature resistant, and radiation resistant features, it is one of the most topical research in current semiconductor materials. GaN-based LED is a new type of solid-state light sources, it have low power, long life, and high luminous efficiency and can be used to make the core part of the white LED which attracted the researchers carry on the thorough research.
In this paper, the optical properties and stability of GaN-based LED are analyzed, the origin and development, current situation and existing problems, possible solutions and the research progress of domestic and foreign counterparts of GaN-based materials are introduced. There should be helpful to the research of GaN-based LED material performance, and theoretical research foundation for our future related research through summarizing predecessors’ work.
Keywords: GaN-based LED Optical Properties Stability
目录
1. 绪论 1
1.1 GaN基材料概述 1
1.2 LED的应用及发展 1
1.3论文的主要内容 2
2. GaN基材料的性质及器件应用 3
2.1 GaN的晶体结构 3
2.2 器件应用 5
2.2.1 用于高亮度LED、蓝光激光器和功率晶体管 5
2.2.2 用于制造高温高频、大功率的器件电路 6
2.3 GaN材料存在的问题及解决方法 6
3. GaN基LED的特性 6
3.1 GaN基LED的器件结构 6
3.2测试方法 7
3.2.1电致发光 7
3.2.2 LED的结温测量 8
3.3 GaN基LED的特性分析 10
3.3.1光学特性 10
3.3.2 电学特性 13
3.3.3热学特性 14
4. 波长稳定性研究 15
4.1 MOCVD技术 15
4.2测试方法 16
4.3研究进展及分析 16
5. GaN基LED研究进展及面临的问题 17
6. 结论 18
参考文献 19
致谢 211. 绪论
1.1 GaN基材料概述