摘要：半导体紫外发光二极管和激光二极管在固态光源、高精度光刻、生物分析及高密度数据存储等领域具有广阔的应用前景。氧化锌(ZnO)是Ⅱ-Ⅵ族直接带隙化合物半导体，其禁带宽度为3.37 eV，室温下激子结合能高达60 meV，有望实现高性能紫外发光器件和低阈值激光器件。目前，ZnO基紫外发光器件和激光器件虽然已有大量的文献报道，但是其性能仍然远低于预期。金属表面等离子体是存在于金属表面的局域电荷震荡，据文献报道其可以增强发光材料及器件的发光效率。实验上已有金属表面等离子体增强ZnO光致发光的报道，但是在增强ZnO基电致发光器件方面的研究还很有限。本论文主要分析表面等离子体效应对ZnO基电致发光和激光器件的增强性能，对其进行总结。47154

毕业论文关键词： 氧化锌；金属表面等离子；发光

Analysis of plasma coupled-mode of ZnO-based Matierial

Abstract: Semiconductor ultraviolet light emitting diode and laser diode have broad application prospects in the fields of solid state light source, high precision lithography, biological analysis, high density data storage and so on. Zinc oxide (ZnO) is a II-VI direct band gap compound semiconductor. The band gap is 3.37 eV and the exciton binding energy is up to 60 meV at room temperature, which is expected to achieve high performance ultraviolet light emitting devices and low threshold laser devices. At present, although there are a large number of literature reports on ZnO based ultraviolet light emitting devices and lasers, the performance is still far lower than expected. The metal surface plasma is the local charge oscillation which exists on the metal surface. According to the literature, it can enhance the luminous efficiency of light-emitting materials and devices. The experiment has been made that the metal surface plasma enhances ZnO light to be light, but the research on the enhancement of ZnO based electro luminescent devices is still limited. This paper mainly analyses the enhancement of surface plasmon effect on ZnO based electro luminescence and laser devices, then summarize these information into a list.

Keywords: ZnO; Metal surface plasma; Light

 目录

摘要 i

Abstract i

1 绪论 1

1.1 研究现状和发展趋势 1

1.1.1 研究现状 1

1.1.2 发展趋势 2

1.2 研究目的及意义 2

2 相关实验 3

2.1 ZNO基材料的制备 3

2.1.1 ZnO体单晶的制备 3

2.1.2 ZnO薄膜的制备 4

2.2 ZNO基材料光谱测试法的原理 5

2.2.1 XRD光谱分析 5

2.2.2 紫外-可见吸收光谱分析 5

2.2.3 红外吸收光谱分析 6

2.2.4 光致发光谱分析 ZnO基材料中等离子耦合模的分析:http://www.youerw.com/wuli/lunwen_49129.html