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In2O3纳米线的可控生长及其应用研究

时间:2020-06-05 19:14来源:毕业论文
一维纳米线的具有良好的电荷输运和光吸收特性,所以一维纳米线能被应用于光电化学水分解领域。虽然我们通过实验得知体心立方结构In2O3晶体的特定晶面具有优良的集合光生空穴能力

摘要:当今之世界,能源危机逐渐受到人们的关注。如何寻找新的可替代能源,正越来越引起科学家的关注。半导体材料具有许多优良的特性,包括价格低廉、无污染、并且能直接把太阳能转化成为化学能储存起来。现所发现的半导体光电极材料带隙较宽、稳定性较差、表面复合率较高,故而引起其光电催化活性较低,限制了其实际应用。在本论文中,将以体心立方结构In2O3晶体为模型催化剂,制备暴露特定晶面的光电极材料,结果表明所研制的光电极具有高效且稳定的光电催化性能,在光电催化领域具有广阔的应用前景。通过研究本文得出以下结论:50383

一维纳米线的具有良好的电荷输运和光吸收特性,所以一维纳米线能被应用于光电化学水分解领域。虽然我们通过实验得知体心立方结构In2O3晶体的特定晶面具有优良的集合光生空穴能力,然而方形纳米线初期生长机理还不是很清楚。本文中我们依据气液固和气固生长原理,同时改进化学气相沉积设备,探讨其初期生长过程。结果表明,方形纳米线于热力学开启势处的光电流密度是0.2mA/cm2,这为纳米线在器件的应用提供实验基础。

毕业论文关键词:光电催化;化学气相沉积;In2O3纳米线

Controlled Growth of In2O3 Nanowires And Its Application

Abstract: At present, the energy crisis is gradually getting people's attention. How to search for new alternative energy sources is becoming more and more concerned by scientists. Semiconductor materials have many excellent properties, including low price, no pollution, and can directly convert the solar energy into chemical energy storage. It is found that the semiconductor optoelectronic materials with wide gap, poor stability, high surface recombination rate is higher, so it caused the low photocatalytic activity, which limits its practical application. In this paper, we select In2O3 with a body centered cubic structure as a model photocatalyst and explore delicately controllable growth of In2O3 nanowires terminated in specific crystal facet by understanding in depeth the underlying growth mechanism. It found that In2O3 nanowires with exposed {001} facets exhibit superior PEC water splitting activity and excellent chemical stability, and the prospect for which is promising. The obtained main results are described as follows: 

One of the characteristics of the nanowires includes a good charge transport and light absorption, so nanowire can be very good to be applied in the field of optoelectronic decomposition. Although we have learned that the crystal surface of In2O3 crystal has an excellent ability to aggregate, the initial growth mechanism is not very clear. In this paper, based on the principle of vapour liquid solid and vapour solid growth, we improved the chemical vapor deposition equipment, and prepared In2O3 nanowires. The results show that the current density of the square nanowires is 0.2mA/cm2, which provides the experimental basis for the application of the nanowire in the device.

Key Words: Photo electro catalysis; Chemical vapor deposition; In2O3 nanowires

目  录

摘要 1

引言 2

1. 光电化学水分解的物理机理 3

1.1 光电化学水分解的物理机理 3

1.2 光电化学水分解的基本要求和过程 4

2. 光电化学水分解受晶面的影响 4

2.1 反应物吸附特性受晶面的影响 4

2.2 光生电子空穴对受晶面的影响 4

2.3 半导体/电解液界面结受晶面的影响 In2O3纳米线的可控生长及其应用研究:http://www.youerw.com/wuli/lunwen_53706.html

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