MSP430G2553单片机脑深部神经刺激器电路设计

摘要本文给出一种脑深部神经刺激器电路设计方案。所设计的脑深部神经刺激器，关键技术在于，其具有低功耗、可调节的特点，达到了本次设计的要求，符合参数标准。

脑深部神经刺激器由控制模块和神经刺激器两部分构成。电路包含多档开关、电平提升电路、镜像电流源、H 桥电路等几个关键模块的应用。多档开关组合控制输出电流的幅度，MSP430G2553 单片机通过控制 PWM 波形的频率和宽度，进而控制电流频率和占空比的变化。单片机输出的 PWM 波形控制 H 桥电路输出参数可调节的正负电流脉冲信号。83849

本文完成了脑深部神经刺激器的电路设计和 PCB 焊接调试工作，将系统功耗稳定在 50mW 以内，顺从电压在 0-8V 可调。其具有的两个电极输出频率范围在 2-250Hz、幅度范围在 0-10mA、脉冲宽度在 60-450μS 内均可调节的电流脉冲信号。符合相关技术要求。

毕业论文关键词：DBS；神经刺激器；低功耗； PSPICE

Abstract A Circuit design of deep brain stimulator has been put forward in this paper。 The direction of this design is low-power and it can be adjusted simply。 The design meet the requirements , and in accordance with the parameters of the standard。

The Circuit design of deep brain stimulator is formed by control and stimulator circuit。The circuit includes several key technologies, such as switch, amplifier circuit, mirror current source and H bridge circuit。 Amplitude of output current is controlled by multiple switches, to control the frequency and width of output current, MSP430G2553 generated two-way PWM waveform, the frequency and width can be adjusted。 The PWM wave was applied to the design of H-bridge, in this way to convert the two PWM wave synthesize into positive and negative pulses。

The paper accomplished the circuit design of deep brain stimulator, welding and debugging of PCB board。 System power consumption was stable within 50mW。 And the Voltage was adjustable at 0-8V 。Realized the current pulse amplitude can be adjusted in 0-10mA ,frequency within 0-250Hz,pulse width between 0V and 8V, basically meet the requirements of the parameters。

Keywords：DBS；Neurostimulator；Low power consumption; PSPICE

第一章绪论 1

1。1 引言 1

1。2 本课题的研究背景和意义 2

1。3 国内外研究现状与发展趋势 3

1。4 论文结构 7

第二章脑深部神经刺激器设计方案 9

2。1 设计思路 9

2。2 关键技术 10

2。2。1MCU 10

2。2。2开关管 11

2。2。3镜像电流源 13

2。2。4 H 桥电路 13

2。3 技术要求 16

2。4 本章小结 17

第三章脑深部神经刺激器开关电路设计 18

3。1 开关电路结构框图 18

3。2 多档开关电路设计 MSP430G2553单片机脑深部神经刺激器电路设计:http://www.youerw.com/zidonghua/lunwen_99063.html