摘要通过测量常规半导体桥的电阻，挑选出电阻比较均匀的半导体桥，用氟化铵溶液对半导体桥的芯片进行表面活化处理，形成Si—F键，该键活泼性较强，键中的F易发生取代反应，从而将含能基团（叠氮基、硝酸酯基、苦酸基）引入到芯片上，测量处理后半导体桥的电阻，发现有轻微的增大，并通过显微图像分析系统观察到含能物质确实被引入到芯片上。最后通过高速图像采集系统比较出复合半导体桥比常规半导体桥火花作用的持续时间长，在电容激励模式下收集到半导体桥起爆时的电流、电压数据。18982
关键字: 半导体桥；含能；电容激励；电爆性能。
毕业设计说明书（毕业论文）外文摘要
Title: Study on electro-explosive characteristics of a new complex SCB
Abstract
The qualified SCB were selected by measuring its resistances. The surfaces of SCB chips were activated by ammonium fluoride solution and the relative active Si—F bonds were formed at the same time. The energetic groups were introduced to chips by means of taking substitution reactions. The resistances of SCB were slightly increased after reactions and it could be observed that the energetic groups were indeed introduced to chips by microscopic image analysis system. By using high-speed image acquisition system, the duration of spark effects of complex SCB was longer than that of normal SCB. The data of current and voltage were collected under capacitance incentive mode.
Keywords: SCB; energetic; capacitance incentive; electro-explosive characteristics.
目   次
  1 绪论    6
1.1 研究背景与意义    6
1.2 半导体的设计与材料    7
1.3 国内外研究    7
1.4 论文总体设计及研究工作    8
2 含能半导体桥的制备    9
2.1 实验所需药品与仪器设备    9
2.1.1 药品    9
2.1.2 仪器设备    9
2.2 常规半导体桥的处理    9
2.2.1 测量常规半导体桥的电阻    10
2.2.2 常规半导体桥的显微图像    10
2.3 叠氮化处理    10
2.3.1 原理    10
2.3.2 操作    10
2.3.3 叠氮基复合半导体桥处理前后电阻的变化    11
2.3.4 叠氮基复合半导体桥的显微图像    11
2.4 硝化处理    11
2.4.1 原理    11
2.4.2 操作    11
2.4.3 硝酸酯基复合半导体桥处理前后的电阻变化    12
2.4.4 硝酸酯基复合半导体桥的显微图像    12
2.5 苦酸处理    13
2.5.1 原理    13
2.5.2 操作    13
2.5.3 苦酸基复合半导体桥处理前后电阻的变化    13
2.5.4 苦酸基复合半导体桥的显微图像    13
2.6 小结    14
3 电爆性能测试    14
3.1 常规半导体桥    16
3.1.1 常规半导体桥起爆后的显微图像    16
3.1.2 常规半导体桥起爆时的图片    16
3.1.3 常规半导体桥的电压、电流曲线分析    17
3.2 叠氮化处理的复合半导体桥    18
3.2.1 叠氮基复合半导体桥起爆后的显微图像    18
3.2.2 叠氮基复合半导体桥起爆时的图片    18
3.2.3 叠氮基复合半导体桥的电压、电流曲线分析    18
3.3 硝化处理的复合半导体桥    19
3.3.1 硝酸酯基复合半导体桥起爆后的显微图像    19 新型复合半导体桥换能元电爆性能研究:http://www.youerw.com/huaxue/lunwen_40312.html