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摘要本论文对In、Pr双掺杂CoSb3基半导体材料的热电性能进行了研究，以In、Pr的掺杂量为变量来得到高品质的InPr双掺杂CoSb3基半导体热电材料。
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本实验是通过感应熔炼的方法制备In、Pr双掺杂CoSb3基半导体材料的，而后对In、Pr双掺杂的CoSb3基半导体材通过一系列的性能测试（包括材料的电导率以及塞贝克系数）得到实验数据，然后进行具体的分析得出通过改变掺杂量来确定如何能更好地优化CoSb3基半导体材料。随着In、Pr的掺杂量的改变，可以发现In0.2Pr0.05Co4Sb12的电导率最高，而且所有样品的电导率都随着温度的升高而降低，表现出了材料的金属性；从不同InPr双掺杂的样品中可以看到塞贝克系数的差异很大，In0.15Pr0.05Co4Sb12在几组样品中的塞贝克系数绝对值最大；计算得出的功率因子PF值是优化材料的关键，本次实验的样品中，In0.15Pr0.05Co4Sb12所能得到的PF值最大。所以本次实验中，掺杂量为In0.15Pr0.05Co4Sb12对材料的热电性能的优化起到了做好的作用。28936
通过其他文献对双掺杂与单掺杂进行对比，发现双掺杂对热电性能的提升更高，所以对CoSb3基半导体热电材料的双掺杂是具有很好的研究价值的。具体可以通过改变掺杂的元素和元素的量来得到更好更优的CoSb3基半导体热电材料。
关键词 ：热电材料 CoSb3基半导体材料 InPr双掺杂 电导率 塞贝克系数 功率因子
毕业论文设计说明书外文摘要
Title CoSb3 thermoelectric performance of semiconductor thermoelectric power generation optimization research
Abstract
This thesis of In、Pr double doped CoSb3 thermoelectric properties of semiconductor materials are studied, with In、Pr doping amount for variable to get high-quality In、Pr double doped CoSb3 base semiconductor thermoelectric materials.
This experiment is made by induction melting method of preparation of In、Pr double doped CoSb3 semiconductor material, and then CoSb3 base of In、Pr double doped semiconductor material through a series of performance tests (including electrical conductivity of materials and Seebeck coefficient) by experiment data, and then make specific analysis it is concluded that by changing the doping amount to determine how to better optimize CoSb3 semiconductor material. Are to be found with the change of the doping amount of In、Pr In0.2 Pr0.05 Co4Sb12 the electrical conductivity of the highest, and the electrical conductivity of all samples were reduced with the increase of temperature, showing the gold properties of materials; Can be seen in the different In、Pr double doped samples of Seebeck coefficient difference is very big, In0.15 Pr0.05 Co4Sb12 Seebeck coefficient absolute value in several groups of samples; Calculates the power factor of the PF value is the key to optimize material, the experimental samples, In0.15 Pr0.05 Co4Sb12 can get PF value maximum. So in this experiment, the doping amount for In0.15 Pr0.05 Co4Sb12 the optimization of the thermoelectric properties play a good role.
By comparing other literature on double doped with single doped, found that the double doped ascend higher, the performance of the thermoelectric so double doping of CoSb3 base semiconductor thermoelectric materials is a great research value. Concrete can be by changing the amount of doping elements and elements to get a better better CoSb3 semiconductor thermoelectric materials.
Keywords Thermoelectric materials CoSb3 semiconductor material InPr Double doped Electrical conductivity Seebeck coefficient Power factor
1 引言 1
1.1 热电材料简介 1
1．2 热电效应 2
1．3 热电性能的表征 1
1．4 CoSb3基半导体材料 4