摘要：在光电探测器领域，以氧化镓纳米晶为代表的第三代半导体材料受到广泛关注。本 实验采用激光液相烧蚀法制备氧化镓纳米晶。用不同能量的激光轰击浸没在过氧化氢溶 液中的高纯镓靶材，形成氧化镓纳米晶，在反应体系中添加聚乙烯醇、聚乙烯吡咯烷酮 等不同的表面活性剂来获得良好分散的产物。将产物分散液滴涂在转移好二硫化钼的硅 基片上，组装成氧化镓/二硫化钼杂化光电探测器。通过荧光分光光度计、紫外可见分光 光度计、光电探测器光谱响应度定标系统等，研究了激光能量、烧蚀时间以及不同表面 活性剂等因素对氧化镓的影响，以及光电探测器的光电性能。结果表明，所制备的氧化 镓/二硫化钼杂化光电探测器具有响应度 0.0126A/W，响应时间为 24 秒。

关键词 氧化镓 纳米晶 二硫化钼 激光液相烧蚀 光电探测器

毕 业 设 计 说 明 书 外 文 摘 要

Title Preparation and performance of gallium oxide nanocrystal photodetector

Abstract：In the field of photodetectors, the third generation of semiconductor materials represented by gallium oxide are widely regarded. Gallium oxide nanocrystal is prepared by using the method of laser ablation in liquid phase in this experiment.The laser with different energy bombarded the target material of high purity gallium in hydrogen peroxide solution, forming the gallium oxide nanocrystals.Different surfactants such as polyvinyl alcohol and polyvinylpyrrolidone could be added to the reaction system to get the products.With molybdenum disulfide transferred on silicon,drops of gallium oxide were dripped on the film.Eventually a gallium oxide nanocrystal/molybdenum disulfide photodetector was processed. By means of fluorescence spectrophotometer, UV-visible spectrophotometer and photoelectric detector spectral responsivity calibration system, etc.,the influence of laser energy,the ablation time and different surfactants to gallium oxide could be obtained.The results show that this gallium oxide nanocrystal/molybdenum disulfide photodetector’s responsivity is 0.0126A/W, and it’s response time is 24s.

Keywords gallium oxide nanocrystal molybdenum disulfide liquid laser ablation photodetector

目 次

1 引言 1

1.1 纳米材料概述 1

1.2 氧化镓的基本介绍 1

1.3 二硫化钼的基本介绍 3

1.4 纳米晶金属氧化物的制备方法 4

1.4.1 激光液相烧蚀法 5

1.5 氧化镓纳米晶杂化光电探测器概述 6

2 实验 7

2.1 氧化镓纳米晶的制备 7

2.1.1 实验设备及药品 7

2.1.2 实验方案及操作 8

2.2 氧化镓纳米晶杂化光电探测器的制备 氧化镓纳米晶杂化光电探测器制备及性能:http://www.youerw.com/tongxin/lunwen_204917.html