ADS GaN HEMT的小信号建模

摘要随着微波技术不断的发展，晶体管对功率和频率的要求越来越高。传统的第二代半导体材料，由于其禁带宽度窄、击穿电场低等缺点，用其制成的晶体管已不易于满足现代雷达技术中的高电压、高功率需要。基于第三代宽禁带半导体材料 GaN 高电子迁移率晶体管(high electron mobility transistor，HEMT)由于其广阔的高频率大功率应用前景而成为目前研究的热点。

在本篇论文中，主要包括了GaN HEMT的小信号模型建立的方法及对模型准确性的验证。利用ADS软件建立了修改的Angelov模型，并通过模型萃取方法获得了模型中的各个参数，完成了栅长为0.35 um栅宽为2×50 um的GaN HEMT在不同偏压下的小信号等效电路。本模型的适用频率范围为0到20 GHz。59625

毕业论文关键词 GaN 小信号模型建模 ADS

毕业设计说明书（论文）外文摘要

Title GaN HEMT small-signal modeling

Abstract

With the development of microwave technology, transistors require increasingly higher demand for power and frequency. As for the traditional second generation semiconductor materials, due to its narrow band gap, low breakdown electric field etc., these transistors have been not easy to meet the needs of high voltage, high power radar techniques. GaN-based high electron mobility transistors become the focus of current research, because of its wide application prospect of high frequency and high power.

This thesis is focused on the method to build a small signal model of GaN HEMT and then verifies the accuracy of the model. By using the ADS software the Angelov model of a 0.35-um GaN HEMT with a 2×50 um gate width is developed. All of the parameters in the model are obtained by the model extraction method under different bias. The valid frequency range of the small-signal model is from 0 to 20 GHz.

Keywords GaN small signal model modeling ADS

1 绪论 1

1.1 课题背景 1

1.1.1 引言 1

1.1.2 GaN材料特性 1

1.1.3 GaN材料制作工艺与技术 2

1.1.4 GaN小信号建模 4

1.2 GaN建模发展现状 5

1.3 本文的主要工作 5

2 模型分析 7

3 外部寄生元件参数萃取 9

3.1 用Yang-long法萃取源极电阻Rs 9

3.2 Cold FET法萃取其它外部寄生参数 10

3.3 本章小结 13

4 内部寄生元件参数萃取 14

4.1 萃取方法推导 14

4.2 不同偏压条件下数据的测量 17

4.3 利用ADS软件处理数据 17

4.4 利用ADS软件优化参数 20

4.5 本章小结 22

5 建模结果分析 24

结论 28

致谢 29

参考文献 ADS GaN HEMT的小信号建模:http://www.youerw.com/tongxin/lunwen_64903.html