摘要类金刚石薄膜(DLC)因其低摩擦系数、高硬度和耐磨性好等摩擦学性能对于切削行业非常重要。在本文中,采用了脉冲电弧离子镀(AIP)技术沉积在高速钢W6Mo5Cr4V2Co5基体上沉积了DLC薄膜。并同时通过对基体进行渗氮预处理来研究渗氮对DLC涂层性能的影响。通过SEM,EDS和XRD对DLC薄膜的表面形貌、组成、结构和性能进行分析。通过洛氏压痕和纳米压痕实验进行薄膜力学性能测试。通过室温圆周往复磨损试验对薄膜的抗磨损性能加以分析。同时使用电化学工作站测试薄膜的耐腐蚀性能。结果表明,基材是否渗氮对DLC薄膜的表面形貌、薄膜厚度、硬度和弹性模量没有明显影响;通过渗氮处理的基体比未渗氮处理的基体,表现出更好的耐磨性和膜基结合力的提高。但其耐蚀性弱于未渗氮试样。59164

毕业论文关键词:电弧离子镀;DLC薄膜;渗氮技术

Abstract Diamond-Like Carbon (DLC) films are important for the cutting industry,because of their low friction coefficient, hardness, good wear resistance and tribology properties. In this paper, the DLC films were deposited on  high speed steel W6Mo5Cr4V2Co5 by using the Arc Ion Plating (AIP) technique in a Pulsed. Nitriding technology was used as a pretreatment followed by the uncoated substrate to improve the tribological performance of the DLC coatings. This paper analyzes the fluence of nitriding behavior of the DLC films. The surface morphology, composition, structure and properties of DLC film were investigated by SEM, EDS and XRD. Mechanical Properties was based on a Rockwell A indentation and nano-indentation test. The tribological behavior for the Antiwear Properties of DLC films was analyzed by circumference reciprocating wear tests. The corrosion resistance was measured by electrochemical workstation. The result show that the coatings which was substrate by a pretreatment nitriding technology, having no significant influence on surface morphology, film thickness, hardness and elastic modulus, showing better wear resistance and elevated adhesion, than the unnitriding specimen. But corrosion resistance was worse than the unnitriding one.

Keywords: Arc Ion Plating; DLC film; Nitriding Technology

第一章 绪论 1

1.1  类金刚石薄膜概述 1

1.1.1  类金刚石薄膜的研究 1

1.1.2  类金刚石薄膜的研究现状与发展 1

1.1.3  类金刚石薄膜的分类 3

1.1.4  类金刚石薄膜的结构与性能 3

1.1.5  类金刚石薄膜的性能 4

1.1.6  类金刚石薄膜的应用 6

1.2  电弧离子镀 7

1.2.1  电弧离子镀的发展 7

1.2.2  电弧离子镀的原理 7

1.2.3  电弧离子镀的特点 7

1.3  摩擦磨损理论研究 7

1.3.1  摩擦理论 7

1.3.2  影响摩擦的因素 8

1.3.3  磨损分类 10

1.4  选题意义与研究内容 11

1.4.1  选题意义 11

1.4.2  研究内容 11

第二章 实验方法及原理 12

2.1  基体选择和预处理

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