摘要SOI技术在抗单粒子效应和瞬时辐射效应方面优于传统的体硅技术，这主要是由于SOI材料内部隐埋氧化层和场氧化层形成器件之间的全介质隔离，但同时也因为该氧化层的存在使得SOI材料的抗总剂量辐射性能变差。有研究表明，通过Si离子注入可在SOI材料隐埋氧化层内形成纳米晶硅产生电子陷阱，俘获辐射过程中产生的电子来中和埋层缺陷俘获的正的陷阱电荷，从而提高SOI材料的抗总剂量辐射能力。67811

本文主要分析了Si离子注入工艺的注入剂量和能量参数对Simbond SOI材料抗总剂量辐射性能的影响。实验采用PL测试图谱分析不同注入剂量和注入能量下纳米晶硅的生长情况。采用Pseudo-MOS技术对SOI材料进行电学特性表征，分析Si离子注入后抗总剂量辐射性能的变化。

毕业论文关键词： SOI技术；隐埋氧化层；抗总剂量辐射；纳米晶硅；Si离子注入； 

毕业设计说明书（论文）外文摘要

Title Effects of Silicon ion implantation process parameters on the total dose radiation properties of SOI materials

Abstract

SOI technology is superior to the conventional silicon technology in single particle effect and transient radiation resistance effect, which is mainly due to that buried oxide layer and field isolation oxide can form the complete dielectric isolation between device and device. But the existence of the buried oxide layer makes the total dose radiation resistant properties of SOI material rigorous. Previous research show that ions implantation of Si into the SOI material can form nano-crystalline silicon in the buried oxide layer, which can create electron traps to capture electrons during radiation and compensate for positive charge in the buried layer, thereby enhancing the total dose radiation resistance of the SOI material.

The paper analyzes the dose and energy parameters of Si ion implantation are how to effect the total dose radiation resistance properties of SOI material. PL spectrum was used to analyze the growth of nano-crystalline silicon under different implantation dose and implantation energy. The Pseudo - MOS technology was used to characterize electrical properties of SOI material, and to analyze changes of the total dose radiation resistance after ion implantation.

Key words: SOI Technology；Buried Oxide；Total Dose Radiation；Nanocrystalline Silicon；Si Ion Implantation;

目录

1 绪论 2

1.1 课题研究背景 2

1.2 SOI技术简介 3

1.3 本课题的研究现状 7

1.4 本论文的研究内容和意义 8

2 Si离子注入法提高SOI材料抗总剂量辐射性能的机理 8

2.1 BOX层对抗辐射性能的影响 8

2.2 Si离子注入在BOX层引入纳米硅晶 9

2.3 Si离子注入工艺参数 10

3 PL谱分析注入能量和剂量对BOX层内纳米晶硅生长的影响 11

3.1 PL谱测试原理 11

3.2 样品制备 12

3.3 测试结果 12

3.4 纳米晶硅生长机理 14

3.5 结论 15

4 Pseudo-MOS技术分析注入剂量和能量对材料抗总剂量辐射性能的影响 15

4.1 Pseudo-MOS技术原理 15

4.2 样品准备及实验条件