热梯度键合全Ni3Sn4IMC微焊点的研究

摘要：宽带隙半导体器件在350℃的高温下仍具有良好的传导特性和工作能力，高温稳定的电路互连对于其安全可靠工作起关键作用。制备由金属间化合物(IMC)组成的高熔点焊点是适应第三代半导体材料的快速发展的方法之一。

本实验选用Ni/Sn/Ni焊点，在260℃条件下，分别通过热梯度(TM)（温度梯度1900℃/cm2）和高温液相键合的方法制备出全Ni3Sn4金属间化合物(IMC)焊点。研究了两种制备方法中焊点界面金属间化合物的形貌演变及生长动力学。结果表明：热梯度键合过程中界面金属间化合物的生长速率比高温液相键合快3-10倍；热梯度键合得到的金属间化合物从焊点的冷端向热端单向生长；热梯度键合冷端基体Ni消耗较少，由于反应中大多数Ni原子来自热端，因此可有效的保护冷端基体。热梯度键合制备全Ni3Sn4IMC焊点解决了传统高温液相键合效率低的问题，为全IMC焊点的制备提供了新的思路。

关键词：金属间化合物；热梯度键合；Ni3Sn4；微焊点

Abstract：Wide band gap semiconductor devices still have good conduction characteristics and workability at high temperatures of 350 ℃. High temperature stable circuit interconnection

plays a key role in their safe and reliable operation. Preparation of intermetallic compounds (IMC) composed of high melting point solder joints is to adapt to the third generation of semiconductor materials, one of the rapid development of the method.

In this experiment, Ni/Sn/Ni intermetallic compounds were prepared by hot gradient (TM) (temperature gradient 1900 ℃/cm) and High temperature liquid phase bonding at

260 ℃(IMC)solder joints. The morphological evolution and growth kinetics of intermetallic compounds in the interface of two kinds of preparation methods were studied. The results show that the interfacial intermetallic compound growth rate is 3 to 10 times higher than that of the High temperature liquid phase bonding during thermal gradient bonding. The intermetallic compound obtained by thermal gradient bonding is from the cold end of the solder joint to the hot end To the growth; thermal gradient bonding cold end of the base Ni less consumption, because the reaction of most of the Ni atoms from the hot side, it can effectively protect the cold end matrix. The preparation of Ni3Sn4 IMC solder joint by thermal gradient bonding solves the problem of low efficiency of traditional High temperature liquid phase bonding, which provides a new idea for the preparation of IMC solder joint.

Keywords: Intermetallic compounds; thermal gradient bonding; Ni3Sn4; micro solder joint

第一章绪论 1

1.1微电子封装技术 1

1.2高温钎料的发展现状 2

1.3高熔点焊点的研究 4

1.3.1高熔点焊点的制备方法 5

1.3.2Ni/Sn/Ni焊点的研究现状 9

1.4本论文研究方法和主要内容 11

第二章实验方法 12

2.1线性焊点的制备 12

2.2实验仪器 13

2.3IMC微焊点制备方法 15

2.4样品分析方法 16

第三章实验结果及分析 17

3.1初始焊点微观组织 17

3.2高温液相键合制备IMC微焊点实验结果及分析 18

3.2.1焊点形貌演变热梯度键合全Ni3Sn4IMC微焊点的研究:http://www.youerw.com/cailiao/lunwen_203906.html