摘要随着微电子产品的发展趋势更趋向于高密度、窄间距、短路径，关于三维叠层封 装的应用的互连焊点尺寸也显著减小。电镀铜薄膜层具有良好的导电、导热、延展性 等优点，因此，电镀铜技术被广泛应用于电子材料制造领域。由于铜凸点具有良好的 电学性能和机械性能，被认为传统的焊球微凸点的替代，用于高密度封装技术中。78325

目前，关于晶体学取向对界面反应的影响的研究大多基于单晶基板，但由于单晶 基板成本高昂且制作较为困难，因此研究电沉积的工艺参数对电镀层择优取向和电镀 层组织结构对界面金属间化合物的生长的影响有深刻意义。所以，本次实验研究镀液 添加剂、电流密度、脉冲电镀等对铜薄膜晶向择优性的影响。

在本文中，我们主要关注铜薄膜基底的表面形貌、生长取向以及Sn在铜薄膜上的 化合物生长等。本次试验利用电镀铜工艺,分别使用硫酸铜-硫酸溶液、硫酸铜-HEDP 溶液为镀液，采用直流水浴加热和常温电脉冲法在不同的电流密度下制备了金属铜薄 膜。用扫描电子显微镜（SEM），X射线衍射仪（XRD），光学显微镜（OM）等对薄 膜的表面形貌、组织结构进行表征；通过数据处理分析出薄膜中晶粒的择优取向；进 而研究锡在铜薄膜上的化合物生长立体形貌。结果表明：提高电流密度、加HEDP添 加剂及使用电脉冲电镀可以提高镀层质量，增强取向峰衍射强度，促进Sn在铜薄膜上 的化合物生长。

毕业论文关键词：Cu电镀层；反应润湿；界面反应

Abstract With the development trend of microelectronic products tend to high density, narrow spacing and shortest path, the interconnect of solder joint size’s application of 3D stacked packaging also decreased significantly。 Electroplated copper thin film layer has advantages of good conductivity, thermal conductivity and ductility。 Therefore, copper plating technology is widely used in the field of electronic materials manufacturing。 Due to the good electrical and mechanical properties of copper bumps, it is considered to replace traditional solder ball micro bumps, alternativing for high density packaging technology。

At present, the research about the influence of crystallographic orientation  on interface reaction is mostly based on a single crystal substrate, but due to high cost and the production of single crystal substrate is difficult, so the research on process parameters of electrodeposition on the plating layer of preferential growth orientation and influence plating structure of intermetallic compounds are of profound significance。 Therefore, this experiment study on the additive in the bath, current density, pulse plating effect to the Bo Mojing optimality of copper。 In this paper, we mainly focus on the surface morphology of copper thin film substrate, growth orientation and Sn on copper film wettability。 The test using the copper plating process, using copper sulfate sulfuric acid solution, sulfate-hedp solution for copper plating solution, using water bath heating and electricity pulse method at different current densities were prepared。 The metal copper film by scanning electron microscopy, X ray diffraction, optical Microscope on the film surface morphology, tissue structure were characterized through data processing and analysis the crystal grain preferred orientation。 Through the study of tin in copper films on the wetting and spreading to observe wetting angle。 The results show that: increasing the current density, adding HEDP additive and using electric pulse plating can improve the coating quality, and enhance the intensity of the diffraction intensity。

Key words: Cu electro plating; Reactive wetting; Interfacial reaction

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