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摘要氧化锌（ZnO）是一种宽禁带半导体，具有较高的激子结合能（60 meV）和良好的透明导电、压电、光电、气敏及压敏特性，且易于与多种半导体材料实现集成化，在透明导体、发光器件、太阳能电池窗口、声表面波器件和场发射显示器等领域具有广泛应用。本论文采用脉冲激光沉积技术在单晶硅衬底上制备了c轴择优取向的镓掺杂氧化锌（Ga doped ZnO，GZO）薄膜，通过X射线衍射（XRD）、原子力显微镜（AFM）、扫描电子显微镜（SEM）和光致发光谱(PL)，对制备薄膜进行了表征分析，研究表明衬底温度和氧压对GZO薄膜表面形貌、晶体质量、微观结构和光学性能具有较大影响，获得了GZO薄膜（002）晶面c轴择优取向生长的工艺参数。研究表明，在较高的衬底温度（600 oC）和合适的氧气压力（13Pa）下沉积的 GZO薄膜具有（002）择优取向，晶粒大小比较均匀，结晶质量较好，且具有较高的紫外光发射强度。10282
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关键词 ZnO薄膜 镓掺杂 脉冲激光沉积 微观结构 表面形貌 光学性能
毕业设计说明书（论文）外文摘要
Title The study of preparation and microstructure of Ga doped ZnO thin films
Abstract
ZnO film is a semiconductor with a wide direct band gap, which has the large excition binding energy (60meV) and many excellent properties such as high transparence, conductivity, piezoelectricity, optical absorption and emission, gas-sensitivity, and voltage-sensitivity. Due to its excellent physical and chemical properties and the ability to integrate with a variety of semiconductor materials, ZnO film has a wide variety of applications such as transparent electrodes, light emitting diodes, window materials for solar cells, surface acoustic wave devices, field emission displays, etc. In the paper, Ga doped ZnO (GZO) films with c-axis growth structure were deposited by pulse laser deposition on Si substrates, and were characterized by X-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope (SEM)and photoluminescence spectra(PL).The influences of substrate temperature and oxygen pressure on the surface morphology, crystal quality, microstructure and optical properties of the deposited GZO films were studied, and the growth parameters of GZO films with (002) orientation were obtained. The results show that the GZO films have (002) preferred orientation and their crystal sizes are relatively uniform, more uniform grain size, good crystalline quality, and have higher UV emission intensity when deposited at higher substrate temperature (600℃) and lower oxygen pressure (13Pa).
Keywords ZnO film Ga Doping Pulse laser deposition Microstructure Surface morphology Optical property
目 次
1 引言1
1.1 ZnO薄膜的结构2
1.2 ZnO薄膜的光电特性3
1.3 ZnO薄膜的发光机理5
1.4 ZnO的Ga掺杂5
1.5 ZnO薄膜的制备方法6
1.6工艺参数对ZnO薄膜特性的影响 8
1.7 ZnO薄膜的应用9
1.8本课题研究的目的和内容11
2 实验 13
2.1 脉冲激光沉积（PLD）技术简介13
2.2 薄膜制备流程 14
2.3 薄膜结构与性能表征 16
3 结果分析与讨论 18
3.1衬底温度对GZO薄膜形成的影响 18
3.2氧气压力对GZO薄膜形成的影响 23
结论 28
致谢 29
参考文献30
1 引言
在材料科学的各分支中，薄膜材料科学的发展一直占据了极为重要的地位。薄膜材料是相对于体材料而言的，是人们采用特殊方法，在体材料的表面沉积或制备的一层性质与体材料完全不同的物质层。由于具备很多体材料所不具备的优点，所以在高科技领域中发挥着重要的作用，例如计算机、集成电路等领域对各种元器件的微型化、集成化提出了越来越高的要求，这些在很大程度上要依靠薄膜材料的发展来实现。