摘要BiVO4是光催化性能良好的半导体光催化剂,但由于较高的电子空穴复合率而限制了其光催化活性,为此,本文对BiVO4进行了两个方面的研究。首先,采用水热法合成了花状BiVO4和四方块型BiVO4,并与溶胶凝胶法合成的BiVO4进行对比,通过XRD、FI-IR、SEM、UV-visDRS等来表征不同形貌的BiVO4,通过光催化降解RhB和氧化NO实验来评价各催化剂的活性,并进行了光催化机理分析,得出四方块型BiVO4的最优形貌特性,以及高(040)晶面对光催化性能的重要影响。然后,利用光催化氧化还原法分别对BiVO4的(040)晶面和(110)晶面进行Ag和MnOx的选择性沉积,并探究了最优沉积量。通过XRD、FI-IR、SEM、XPS、UV-visDRS对Ag/BiVO4、MnOx/Ag/BiVO4进行表征,并进行了各催化剂的活性评价实验。金属和金属氧化物在不同晶面的选择性沉积降低了电子空穴的
复合率,从而提升光催化活性。
关键词 BiVO4 形貌 选择性沉积 光催化活性
毕业设计说明书外文摘要
Title Study on the modification of BiVO4 photocatalysts and their photocatalytic performance
Abstract:BiVO4 semiconductor photocatalyst has been playing an important role in the filed of photocatalysis. However, its high electron hole recombination rate limit its photocatalytic activity. Hence, we have carried out two aspects studies of BiVO4. Firstly, flowerlike BiVO4 and square BiVO4 are synthesized via a facile sovothermal route, and the BiVO4 with common morphology was aslo synthesized for comparation, using sol-gel method. XRD, FI-IR, SEM and UV-vis DRS are deveoped to charactrize the catalysts. Photocatalytic performance of the BiVO4 with different morphology has been evaluated by the degradation of RhB and removing gaseous NO under VL irradiation. We have concluded that the square BiVO4 with high (040) crystal facets has displayed a better photocatalytic performance. Secondly, the selective deposition of Ag and MnOx on the (040) and (110) crystal facets of BiVO4 was carried out by photocatalytic oxidation-reduction method. Ag/BiVO4,MnOx/Ag/BiVO4 composite photocatalysts were characterized by XRD, FI-IR, SEM, XPS and UV-vis DRS, and the activity evaluation experiments were carried out. The deposition of metal or metal oxide have reduced the recombination rate of electron and holes, and therefore enhancing the photocatalytic activity.
Keywords BiVO4 morphology selective deposition photocatalytic performance
目 录
1 绪论 1
1.1 研究背景 1
1.2 光催化剂机理 2
1.3 光催化剂的研究现状 3
1.4 本课题的研究内容 5
2 实验内容 6
2.1 实验材料 6
2.2 光催化剂的制备 7
2.4 光催化降解RhB活性评价实验 9
2.5 光催化氧化NO活性评价实验