摘要伴随着移动智能产品的兴起，移动信息存储技术逐渐成为信息技术重要的研 究领域之一。阻变随机存储器，因其简单的器件结构，相对低廉的成本以及优异 的性能，正是代替硅闪存的热门候选者之一。本文通过将硫化物半导体材料制备 成具有阻变特性的二维薄膜器件，并研究其阻变性能。68568

本论文通过一步法制备 Ag2S 纳米晶。扫描电镜等多种表征方法证明所制得的 纳米晶为结晶性及单分散性良好的 Ag2S 纳米晶，粒径分布在 10nm 左右。而后本 文利用旋涂的方法制作 Ag2S 纳米晶薄膜器件并测试其电学性能。I-V 测试结果表 明所制得的阻变器件具有很高的高低阻值比，高达 200 倍。同时，该器件具有较 低的操作电压，良好的循坏稳定性和数据保留性，具有很大的应用前景。最后， 尝试提出其阻变机理，为进一步提高器件的性能提供更多的理论依据。

毕业论文关键词 阻变存储器 硫化银纳米晶 阻变机理 单分散 忆阻效应

Title Two-dimensional semiconductor of sulfide-based Resistive

Memories

Abstract

With the rise of mobile intelligent products, mobile information storage technology is becoming one of the important research fields of information technology. On account of the simple structure,low cost and excellent performance of resistive random access memory(RRAM),it has become the popular candidate  to  displace  Si-based  flash  memory.This  paper  prepared two

-dimensional film devices which have resistive switching effect by using sufide semiconductor,and we studied its switching performance.

The papper prepared Ag2S nanocrystal by one-step method. Varieties of characterization methods,such as scanning electron microscope,have proved the sample’s great crystalline and monodisperse ,which has an average grain size of 10nm.Then we fabricate nanocrystalline Ag2S thin-film device by using spin-coating and test the electrical properties.The result of I-V test shows that the radio of HRS to LRS of prepared resistive device is as high as 200.Simultaneusly ,this device shows a great application prospect because of its low operating voltage ,great stability and data retention characteristics.In the end, we try to propose the resistive switching mechanism in order to provide more theoretical basis to further improve performance of the devive.

Keywords resistive random access memory(RRAM);  Ag2S nanocrystals; resistive mechanism; monodisperse; resistance effect

1 绪论 1

1.1  引言 1

1.2  阻变存储器概述 2

1.2.1  阻变存储层的材料 3

1.2.2  现有阻变主要机理模型 5

1.3  本论文研究意义及内容 6

1.3.1  本研究意义 6

1.3.2  论文研究内容 7

2 实验制备方法与原理性 8

2.1  材料制备与表征方法 8

2.1.1  阻变层薄膜材料的制备 8

2.1.2  材料表征方法 9

2.2  器件组装 10

2.2.1  衬底的清洗 10